TWO-DIMENSIONAL ELECTRON-GAS IN A SELECTIVELY DOPED INP/IN0.53GA0.47AS HETEROSTRUCTURE GROWN BY CHLORIDE TRANSPORT VAPOR-PHASE EPITAXY

被引：28

作者：

TAKIKAWA, M

KOMENO, J

OZEKI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.94326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：280 / 282

页数：3

相关论文

共 6 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J].

BANDY, S ;

NISHIMOTO, C ;

HYDER, S ;

HOOPER, C .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :817-819

[2] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY ;

DRUMMOND, TJ ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :147-149

[3] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

GULDNER, Y ;

VIEREN, JP ;

VOISIN, P ;

VOOS, M ;

RAZEGHI, M ;

POISSON, MA .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :877-879

[4] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE [J].

KASTALSKY, A ;

DINGLE, R ;

CHENG, KY ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :274-277

[5] VAPOR-PHASE GROWTH OF INGAASP-INP DH STRUCTURES BY THE DUAL-GROWTH-CHAMBER METHOD [J].

MIZUTANI, T ;

YOSHIDA, M ;

USUI, A ;

WATANABE, H ;

YUASA, T ;

HAYASHI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L113-L116

[6]

OLIVER JD, 1980, J ELECTRON MATER, V9, P63