CHEMICAL BEAM EPITAXIAL-GROWTH OF EXTREMELY HIGH-QUALITY INGAAS ON INP

被引：40

作者：

TSANG, WT

DAYEM, AH

CHIU, TH

CUNNINGHAM, JE

SCHUBERT, EF

DITZENBERGER, JA

SHAH, J

ZYSKIND, JL

TABATABAIE, N

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

[2] BELL COMMUN RES,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期

关键词：

D O I：

10.1063/1.97214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：170 / 172

页数：3

共 27 条

[1] HIGH-QUALITY EPITAXIAL INDIUM-PHOSPHIDE AND INDIUM ALLOYS GROWN USING TRIMETHYLINDIUM AND PHOSPHINE IN AN ATMOSPHERIC-PRESSURE REACTOR
BASS, SJ
YOUNG, ML
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 311 - 318
[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703
[3] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY GAINAS ON INP
CAREY, KW
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 89 - 91
[4] GROWTH OF HIGH-QUALITY GAINAS ON INP BUFFER LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
CHAN, KT
ZHU, LD
BALLANTYNE, JM
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 44 - 46
[5] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
GOETZ, KH
BIMBERG, D
JURGENSEN, H
SELDERS, J
SOLOMONOV, AV
GLINSKII, GF
RAZEGHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4543 - 4552
[6] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINAS USING TRIMETHYLINDIUM
KUO, CP
YUAN, JS
COHEN, RM
DUNN, J
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 550 - 552
[7] GROWTH OF IN0.53GA0.47AS AND INP ON INP SUBSTRATE BY MOLECULAR-BEAM EPITAXY
LAMBERT, M
HUET, D
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (12): : 757 - 761
[8] X-RAY DOUBLE-CRYSTAL CHARACTERIZATION OF HIGHLY PERFECT INGAAS INP GROWN BY VAPOR-PHASE EPITAXY
MACRANDER, AT
STREGE, KE
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 442 - 446
[9] OPTICAL STUDIES OF IN0.53GA0.47AS
MARZIN, JY
BENCHIMOL, JL
SERMAGE, B
ETIENNE, B
VOOS, M
[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (02) : 79 - 82
[10] MATSIU Y, 1985, J VAC SCI TECHNOL B, V3, P530

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