GROWTH OF HIGH-QUALITY GAINAS ON INP BUFFER LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：13

作者：

CHAN, KT

ZHU, LD

BALLANTYNE, JM

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 01期

关键词：

D O I：

10.1063/1.96397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：44 / 46

页数：3

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