ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINAS USING TRIMETHYLINDIUM

被引：58

作者：

KUO, CP ^{[1
]}

YUAN, JS ^{[1
]}

COHEN, RM ^{[1
]}

DUNN, J ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

机构：

[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 05期

关键词：

D O I：

10.1063/1.94799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：550 / 552

页数：3

共 24 条

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[7] OMVPE GROWTH OF INP USING TMIN [J].

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