GROWTH AND CHARACTERIZATION OF GA0.47IN0.53AS FILMS ON INP SUBSTRATES USING TRIETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE

被引：19

作者：

WHITELEY, JS

GHANDHI, SK

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 05期

关键词：

D O I：

10.1149/1.2119915

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：1191 / 1195

页数：5

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