HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE .1. GROWTH CHARACTERIZATION

被引：26

作者：

BALIGA, BJ ^{[1
]}

GHANDHI, SK ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 12期

关键词：

D O I：

10.1149/1.2401760

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1642 / 1646

页数：5

相关论文

共 8 条

[1] BALIGA BJ, 1974, J ELECTROCHEM SOC, V121
[2] GLASSTONE S, 1965, TEXTBOOK PHYSICAL CH, P642
[3] GALLIUM DIETHYL CHLORIDE - A NEW SUBSTANCE IN PREARATION OF EPITAXIAL GALLIUM ARSENIDE
LINDEKE, K
SACK, W
NICKL, JJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1316 - &
[4] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS
MANASEVI.HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 135 - 137
[5] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM
MANASEVIT, HM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 647 - +
[6] MANASEVIT HM, 1969, J ELECTROCHEM SOC, V116, P1925
[7] EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE
RAICHOUDBURY, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1745 - +
[8] SMITH P, 1973, THESIS RENSSELAER PO