GROWTH AND CHARACTERIZATION OF GA1-XINXAS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：11

作者：

HESS, KL ^{[1
]}

KASEMSET, DL ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90089

来源：

关键词：

D O I：

10.1007/BF02657926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：779 / 798

页数：20

共 13 条

[1] BISARO R, 1979, APPL PHYS LETT, V34, P1
[2] CULLEN GW, 1983, RCA REV, V44
[3] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY
DAVIES, GJ
HECKINGBOTTOM, R
OHNO, H
WOOD, CEC
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292
[4] EISH JJ, 1967, CHEM ORGANOMETALLIC, P41
[5] KASEMSET D, UNPUB J ELECTRON MAT
[6] NEUBERGER M, 1972, HDB ELECTRONIC MATER, V7, P51
[7] THE CARRIER MOBILITIES IN GA0.47IN0.53AS GROWN BY ORGANOMETALLIC CVD AND LIQUID-PHASE EPITAXY
PEARSALL, TP
HIRTZ, JP
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 127 - 131
[8] Pilcher G., 1982, CHEM METAL CARBON BO, P43
[9] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDS
RAZEGHI, M
POISSON, MA
LARIVAIN, JP
DUCHEMIN, JP
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 371 - 395
[10] VANCHAGOVA VK, 1976, ZH OBSHCH KHIM+, V46, P989