THE CARRIER MOBILITIES IN GA0.47IN0.53AS GROWN BY ORGANOMETALLIC CVD AND LIQUID-PHASE EPITAXY

被引：66

作者：

PEARSALL, TP ^{[1
]}

HIRTZ, JP ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90258-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：127 / 131

页数：5

共 16 条

[1] GROVES S, 1980, COMMUNICATION
[2] GROWTH OF GA0.47IN0.53AS ON INP BY LOW-PRESSURE MO CVD
HIRTZ, JP
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PEARSALL, TP
BONNET, M
[J]. ELECTRONICS LETTERS, 1980, 16 (11) : 415 - 416
[3] COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y
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BALLMAN, AA
DEWINTER, JC
NAHORY, RE
POLLACK, MA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 561 - 568
[4] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER
LEHENY, RF
NAHORY, RE
POLLACK, MA
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DEWINTER, JC
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[J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355
[5] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS
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[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244
[6] NAKAJIMA K, 1979, J APPL PHYS, V50, P4975, DOI 10.1063/1.325575
[7] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP
OLIVER, JD
EASTMAN, LF
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) : 693 - 712
[8] GROWTH OF GAXIN1-XAS ON (100) INP BY LIQUID-PHASE EPITAXY
PEARSALL, TP
BISARO, R
ANSEL, R
MERENDA, P
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 497 - 499
[9] GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED EPITAXIAL-FILMS OF GAXIN1-XAS-INP BY LIQUID-PHASE EPITAXY
PEARSALL, TP
HOPSON, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4407 - 4409
[10] GA0.47IN0.53AS - A TERNARY SEMICONDUCTOR FOR PHOTODETECTOR APPLICATIONS
PEARSALL, TP
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) : 709 - 720

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