ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY

被引：99

作者：

DAVIES, GJ

HECKINGBOTTOM, R

OHNO, H

WOOD, CEC

CALAWA, AR

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期

关键词：

D O I：

10.1063/1.91910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：290 / 292

页数：3

相关论文

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