COMPOSITION CONTROL OF GAXIN1-XAS FILMS GROWN BY MBE ONTO INP SUBSTRATES

被引：4

作者：

NORRIS, MT ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 10期

关键词：

D O I：

10.1063/1.91340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：833 / 835

页数：3

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[2] FARROW RFC, 1977, CRYSTAL GROWTH MATER, P238
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[7] SUBSTRATE-TEMPERATURE LIMITS FOR EPITAXY OF INP BY MBE
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