SUBSTRATE-TEMPERATURE LIMITS FOR EPITAXY OF INP BY MBE

被引：21

作者：

NORRIS, MT

STANLEY, CR

机构：

[1] Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.91228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature range within which epitaxial unintentionally doped InP can be deposited from In and P2 beams by MBE on to (100) InP substrates has been determined to be 100-405°C. Above 410°C whisker growth from In droplets via a vapor-liquid-solid process occurs; below 95°C polycrystalline layers result on account of the nondissociation of P2.

引用

收藏

页码：617 / 620

页数：4

相关论文

共 14 条

[1] WHISKER CRYSTALS OF GALLIUM ARSENIDE AND GALLIUM PHOSPHIDE GROWN BY VAPOR-LIQUID-SOLID MECHANISM [J].

BARNS, RL ;

ELLIS, WC .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) :2296-&

[2]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] ISOELECTRONIC TRAP BISMUTH IN INDIUM PHOSPHIDE [J].

DEAN, PJ ;

WHITE, AM ;

WILLIAMS, EW ;

ASTLES, MG .

SOLID STATE COMMUNICATIONS, 1971, 9 (18) :1555-&

[4] SEMICONDUCTOR SUPERFINE STRUCTURES BY COMPUTER-CONTROLLED MOLECULAR-BEAM EPITAXY [J].

ESAKI, L ;

CHANG, LL .

THIN SOLID FILMS, 1976, 36 (02) :285-298

[5]

FARROW RC, 1974, J PHYS D, V7, P121

[6]

FARROW RFC, 1977, CRYSTAL GROWTH MATER, P238

[7] ELECTRON MOBILITY IN INP [J].

GLISKSMAN, M ;

WEISER, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) :728-731

[8]

JOYCE BA, 1977, I PHYS C SER, V32, P17

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP [J].

MCFEE, JH ;

MILLER, BI ;

BACHMANN, KJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :259-272

[10] TEMPERATURE-RANGE FOR GROWTH OF AUTO-EPITAXIAL GAAS FILMS BY MBE [J].

NEAVE, JH ;

JOYCE, BA .

JOURNAL OF CRYSTAL GROWTH, 1978, 43 (02) :204-208