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PREFERENTIAL EVAPORATION OF IN FROM GAXIN1-XAS
被引:20
作者
:
GOLDSTEIN, B
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GOLDSTEIN, B
[
1
]
SZOSTAK, D
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
SZOSTAK, D
[
1
]
机构
:
[1]
RCA LABS,PRINCETON,NJ 08540
来源
:
APPLIED PHYSICS LETTERS
|
1975年
/ 26卷
/ 12期
关键词
:
D O I
:
10.1063/1.88035
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:685 / 687
页数:3
相关论文
共 9 条
[1]
BELL RL, 1973, NEGATIVE ELECTRON AF
[2]
SPUTTERING YIELDS OF SEVERAL SEMICONDUCTING COMPOUNDS UNDER ARGON ION BOMBARDMENT
COMAS, J
论文数:
0
引用数:
0
h-index:
0
COMAS, J
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
COOPER, CB
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(07)
: 2820
-
&
[3]
PHOTOELECTRON SURFACE ESCAPE PROBABILITY OF (GA,IN)AS-CS-O IN 0.9 TO - 1.6 MUM RANGE
FISHER, DG
论文数:
0
引用数:
0
h-index:
0
FISHER, DG
ENSTROM, RE
论文数:
0
引用数:
0
h-index:
0
ENSTROM, RE
ESCHER, JS
论文数:
0
引用数:
0
h-index:
0
ESCHER, JS
WILLIAMS, BF
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, BF
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(09)
: 3815
-
&
[4]
DIFFERENT BONDING STATES OF CS AND O ON HIGHLY PHOTOEMISSIVE GAAS BY FLASH-DESORPTION EXPERIMENTS
GOLDSTEIN, B
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GOLDSTEIN, B
SZOSTAK, D
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
SZOSTAK, D
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(03)
: 111
-
113
[5]
LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS
JAMES, LW
论文数:
0
引用数:
0
h-index:
0
JAMES, LW
UEBBING, JJ
论文数:
0
引用数:
0
h-index:
0
UEBBING, JJ
[J].
APPLIED PHYSICS LETTERS,
1970,
16
(09)
: 370
-
&
[6]
OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
JONA, F
论文数:
0
引用数:
0
h-index:
0
JONA, F
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1965,
9
(5-6)
: 375
-
&
[7]
PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C
JONA, F
论文数:
0
引用数:
0
h-index:
0
JONA, F
WENDT, HR
论文数:
0
引用数:
0
h-index:
0
WENDT, HR
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(09)
: 3637
-
&
[8]
GaAs-Cs: A NEW TYPE OF PHOTOEMITTER
Scheer, J. J.
论文数:
0
引用数:
0
h-index:
0
机构:
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
Scheer, J. J.
van Laar, J.
论文数:
0
引用数:
0
h-index:
0
机构:
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
van Laar, J.
[J].
SOLID STATE COMMUNICATIONS,
1965,
3
(08)
: 189
-
193
[9]
FERMI LEVEL STABILIZATION AT CESIATED SEMICONDUCTOR SURFACES
SCHEER, JJ
论文数:
0
引用数:
0
h-index:
0
SCHEER, JJ
VANLAAR, J
论文数:
0
引用数:
0
h-index:
0
VANLAAR, J
[J].
SOLID STATE COMMUNICATIONS,
1967,
5
(04)
: 303
-
&
←
1
→
共 9 条
[1]
BELL RL, 1973, NEGATIVE ELECTRON AF
[2]
SPUTTERING YIELDS OF SEVERAL SEMICONDUCTING COMPOUNDS UNDER ARGON ION BOMBARDMENT
COMAS, J
论文数:
0
引用数:
0
h-index:
0
COMAS, J
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
COOPER, CB
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(07)
: 2820
-
&
[3]
PHOTOELECTRON SURFACE ESCAPE PROBABILITY OF (GA,IN)AS-CS-O IN 0.9 TO - 1.6 MUM RANGE
FISHER, DG
论文数:
0
引用数:
0
h-index:
0
FISHER, DG
ENSTROM, RE
论文数:
0
引用数:
0
h-index:
0
ENSTROM, RE
ESCHER, JS
论文数:
0
引用数:
0
h-index:
0
ESCHER, JS
WILLIAMS, BF
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, BF
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(09)
: 3815
-
&
[4]
DIFFERENT BONDING STATES OF CS AND O ON HIGHLY PHOTOEMISSIVE GAAS BY FLASH-DESORPTION EXPERIMENTS
GOLDSTEIN, B
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GOLDSTEIN, B
SZOSTAK, D
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
SZOSTAK, D
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(03)
: 111
-
113
[5]
LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS
JAMES, LW
论文数:
0
引用数:
0
h-index:
0
JAMES, LW
UEBBING, JJ
论文数:
0
引用数:
0
h-index:
0
UEBBING, JJ
[J].
APPLIED PHYSICS LETTERS,
1970,
16
(09)
: 370
-
&
[6]
OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
JONA, F
论文数:
0
引用数:
0
h-index:
0
JONA, F
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1965,
9
(5-6)
: 375
-
&
[7]
PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C
JONA, F
论文数:
0
引用数:
0
h-index:
0
JONA, F
WENDT, HR
论文数:
0
引用数:
0
h-index:
0
WENDT, HR
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(09)
: 3637
-
&
[8]
GaAs-Cs: A NEW TYPE OF PHOTOEMITTER
Scheer, J. J.
论文数:
0
引用数:
0
h-index:
0
机构:
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
Scheer, J. J.
van Laar, J.
论文数:
0
引用数:
0
h-index:
0
机构:
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
van Laar, J.
[J].
SOLID STATE COMMUNICATIONS,
1965,
3
(08)
: 189
-
193
[9]
FERMI LEVEL STABILIZATION AT CESIATED SEMICONDUCTOR SURFACES
SCHEER, JJ
论文数:
0
引用数:
0
h-index:
0
SCHEER, JJ
VANLAAR, J
论文数:
0
引用数:
0
h-index:
0
VANLAAR, J
[J].
SOLID STATE COMMUNICATIONS,
1967,
5
(04)
: 303
-
&
←
1
→