FERMI LEVEL STABILIZATION AT CESIATED SEMICONDUCTOR SURFACES

[1] ABAGYAN SA, 1965, FIZ TVERD TELA+, V6, P2529

[2] ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 144 (02): : 558 - &

[3] ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[4] SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A912 - &

[5] PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP [J]. PHYSICAL REVIEW, 1966, 142 (02): : 519 - &

[6] PHOTOELECTRIC EMISSION AND INTERBAND TRANSITIONS OF GAP [J]. PHYSICAL REVIEW, 1966, 147 (02): : 603 - &

[7] REFLECTIVITY PHOTOELECTRIC EMISSION AND WORK FUNCTION OF ALSB [J]. PHYSICAL REVIEW, 1965, 139 (4A): : 1228 - &

[8] THEORY OF SURFACE STATES [J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &

[9] METAL-SEMICONDUCTOR SURFACE BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &

[10] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193

[1] ABAGYAN SA, 1965, FIZ TVERD TELA+, V6, P2529

[2] ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 144 (02): : 558 - &

[3] ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[4] SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A912 - &

[5] PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP [J]. PHYSICAL REVIEW, 1966, 142 (02): : 519 - &

[6] PHOTOELECTRIC EMISSION AND INTERBAND TRANSITIONS OF GAP [J]. PHYSICAL REVIEW, 1966, 147 (02): : 603 - &

[7] REFLECTIVITY PHOTOELECTRIC EMISSION AND WORK FUNCTION OF ALSB [J]. PHYSICAL REVIEW, 1965, 139 (4A): : 1228 - &

[8] THEORY OF SURFACE STATES [J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &

[9] METAL-SEMICONDUCTOR SURFACE BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &

[10] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193