PHOTOELECTRIC EMISSION AND INTERBAND TRANSITIONS OF GAP

[1] ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 144 (02): : 558 - &

[2] REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 662 - +

[3] REFLECTANCE AND PHOTOEMISSION FROM SI [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 389 - &

[4] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[5] ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (05): : 1342 - 1343

[6] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[7] PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP [J]. PHYSICAL REVIEW, 1966, 142 (02): : 519 - &

[8] FROSCH C, PRIVATE COMMUNICATIO

[9] THE EPITAXIAL GROWTH OF GAP BY A GA2O VAPOR TRANSPORT MECHANISM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 180 - 184

[10] SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 23 - &

[1] ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 144 (02): : 558 - &

[2] REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 662 - +

[3] REFLECTANCE AND PHOTOEMISSION FROM SI [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 389 - &

[4] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[5] ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (05): : 1342 - 1343

[6] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[7] PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP [J]. PHYSICAL REVIEW, 1966, 142 (02): : 519 - &

[8] FROSCH C, PRIVATE COMMUNICATIO

[9] THE EPITAXIAL GROWTH OF GAP BY A GA2O VAPOR TRANSPORT MECHANISM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 180 - 184

[10] SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 23 - &