REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS

[1] REFLECTANCE AND PHOTOEMISSION FROM SI [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 389 - &

[2] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[3] CRITICAL POINTS AND ULTRAVIOLET REFLECTIVITY OF SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (03) : 94 - &

[4] COHEN MH, TO BE PUBLISHED

[5] SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A912 - &

[6] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (02) : 59 - &

[7] FUNDAMENTAL REFLECTIVITY OF GAAS AT LOW TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (03) : 97 - &

[8] ENERGY-BAND INTERPOLATION SCHEME BASED ON A PSEUDOPOTENTIAL [J]. PHYSICAL REVIEW, 1958, 112 (03): : 685 - 695

[9] WILLIAMS EW, TO BE PUBLISHED

[10] ZALLEN R, 1964, PHYS REV, V134, P1628

[1] REFLECTANCE AND PHOTOEMISSION FROM SI [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 389 - &

[2] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[3] CRITICAL POINTS AND ULTRAVIOLET REFLECTIVITY OF SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (03) : 94 - &

[4] COHEN MH, TO BE PUBLISHED

[5] SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A912 - &

[6] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (02) : 59 - &

[7] FUNDAMENTAL REFLECTIVITY OF GAAS AT LOW TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (03) : 97 - &

[8] ENERGY-BAND INTERPOLATION SCHEME BASED ON A PSEUDOPOTENTIAL [J]. PHYSICAL REVIEW, 1958, 112 (03): : 685 - 695

[9] WILLIAMS EW, TO BE PUBLISHED

[10] ZALLEN R, 1964, PHYS REV, V134, P1628