ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM

被引：93

作者：

ALLEN, FG

GOBELI, GW

机构：

来源：

PHYSICAL REVIEW | 1966年 / 144卷 / 02期

关键词：

D O I：

10.1103/PhysRev.144.558

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：558 / &

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[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES
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[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON
ALLEN, FG
GOBELI, GW
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[3] HIGH VACUUM DEPOSITION OF CESIUM
ALLEN, FG
GOBELI, GW
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[4] REFLECTANCE AND PHOTOEMISSION FROM SI
BRUST, D
PHILLIPS, JC
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[5] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON
BRUST, D
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[6] CRITICAL POINTS AND ULTRAVIOLET REFLECTIVITY OF SEMICONDUCTORS
BRUST, D
BASSANI, F
PHILLIPS, JL
[J]. PHYSICAL REVIEW LETTERS, 1962, 9 (03) : 94 - &
[7] BAND-THEORETIC MODEL FOR PHOTOELECTRIC EFFECT IN SILICON
BRUST, D
[J]. PHYSICAL REVIEW, 1965, 139 (2A): : A489 - &
[8] BRUST D, 1965, 1964 P INT C PHYS SE
[9] ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
BURTON, JA
[J]. PHYSICAL REVIEW, 1957, 108 (05): : 1342 - 1343
[10] COHEN MH, TO BE PUBLISHED

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