PHOTOELECTRON SURFACE ESCAPE PROBABILITY OF (GA,IN)AS-CS-O IN 0.9 TO - 1.6 MUM RANGE

[1] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +

[2] INTERFACIAL BARRIER EFFECTS IN III-V PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 513 - +

[3] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +

[4] PROPOSED MODEL FOR CS-O COVERED SEMICONDUCTOR PHOTOCATHODES [J]. SURFACE SCIENCE, 1971, 25 (02) : 457 - &

[5] ENSTROM RE, UNPUBLISHED

[6] ENSTROM RE, 1970, GALLIUM ARSENIDE REL, P30

[7] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (09) : 371 - &

[8] FISHER DG, 1971 C PHOT SEC EM M

[9] Garbe S., 1970, Physica Status Solidi A, V2, P497, DOI 10.1002/pssa.19700020311

[10] Gobeli G. W., 1966, SEMICONDUCT SEMIMET, V2, P275

[1] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +

[2] INTERFACIAL BARRIER EFFECTS IN III-V PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 513 - +

[3] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +

[4] PROPOSED MODEL FOR CS-O COVERED SEMICONDUCTOR PHOTOCATHODES [J]. SURFACE SCIENCE, 1971, 25 (02) : 457 - &

[5] ENSTROM RE, UNPUBLISHED

[6] ENSTROM RE, 1970, GALLIUM ARSENIDE REL, P30

[7] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (09) : 371 - &

[8] FISHER DG, 1971 C PHOT SEC EM M

[9] Garbe S., 1970, Physica Status Solidi A, V2, P497, DOI 10.1002/pssa.19700020311

[10] Gobeli G. W., 1966, SEMICONDUCT SEMIMET, V2, P275