CALCULATED ELECTRON-MOBILITY OF TWO-DIMENSIONAL ELECTRONS IN ALINAS/INGAAS AND INP/INGAAS SINGLE HETEROSTRUCTURES

被引:31
作者
TAKEDA, Y
SASAKI, A
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1985年 / 24卷 / 10期
关键词
D O I
10.1143/JJAP.24.1307
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1307 / 1311
页数:5
相关论文
共 20 条
[2]  
BARNARD JA, 1982, INST PHYS CONF SER, P461
[3]   ENERGY-LEVELS AND ALLOY SCATTERING IN INP-IN (GA)AS HETEROJUNCTIONS [J].
BASTARD, G .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :591-593
[5]   ESTIMATION OF ALLOY SCATTERING POTENTIAL IN TERNARIES FROM THE STUDY OF TWO-DIMENSIONAL ELECTRON-TRANSPORT [J].
BASU, PK ;
NAG, BR .
APPLIED PHYSICS LETTERS, 1983, 43 (07) :689-691
[6]   LATTICE SCATTERING MOBILITY OF A TWO-DIMENSIONAL ELECTRON-GAS IN GAAS [J].
BASU, PK ;
NAG, BR .
PHYSICAL REVIEW B, 1980, 22 (10) :4849-4852
[7]   MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS PLANAR PHOTOCONDUCTIVE DETECTORS FOR 1.0-1.55-MUM APPLICATIONS [J].
CHEN, CY ;
PANG, YM ;
GARBINSKI, PA ;
CHO, AY ;
ALAVI, K .
APPLIED PHYSICS LETTERS, 1983, 43 (03) :308-310
[8]   CURRENT TRANSPORT IN MODULATION-DOPED GA0.47IN0.53AS AL0.48IN0.52AS HETEROJUNCTIONS AT MODERATE ELECTRIC-FIELDS [J].
DRUMMOND, TJ ;
MORKOC, H ;
CHENG, KY ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3654-3657
[9]   (INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD [J].
FUKUI, T ;
SAITO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L521-L523
[10]   TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE [J].
KASTALSKY, A ;
DINGLE, R ;
CHENG, KY ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :274-277