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- [1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER[J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 607 - 609CHENG, KYCHO, AYWAGNER, WR
- [2] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6328 - 6330CHENG, KYCHO, AYWAGNER, WR
- [3] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149CHENG, KYCHO, AYDRUMMOND, TJMORKOC, H
- [5] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION[J]. ELECTRONICS LETTERS, 1981, 17 (10) : 342 - 344DELESCLUSE, PLAVIRON, MCHAPLART, JDELAGEBEAUDEUF, DLINH, NT
- [6] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1238 - 1240DRUMMOND, TJKOPP, WFISCHER, RMORKOC, HTHORNE, RECHO, AY
- [7] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386DRUMMOND, TJMORKOC, HCHO, AY
- [8] THE EFFECT OF GROWTH TEMPERATURE ON THE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : L455 - L458HIYAMIZU, SFUJII, TMIMURA, TNANBU, KSAITO, JHASHIMOTO, H
- [9] KEEVER M, UNPUB
- [10] MICROWAVE FIELD-EFFECT TRANSISTORS 1976[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330LIECHTI, CA