MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] GROWTH OF EXTREMELY UNIFORM LAYERS BY ROTATING SUBSTRATE HOLDER WITH MOLECULAR-BEAM EPITAXY FOR APPLICATIONS TO ELECTRO-OPTIC AND MICROWAVE DEVICES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 360 - 362

[4] DAYTON BB, 1956, 1956 VAC S T BOST, P5

[5] GROWTH OF GAYIN1-YAS-INP HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1310 - 1317

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] GROWTH OF EXTREMELY UNIFORM LAYERS BY ROTATING SUBSTRATE HOLDER WITH MOLECULAR-BEAM EPITAXY FOR APPLICATIONS TO ELECTRO-OPTIC AND MICROWAVE DEVICES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 360 - 362

[4] DAYTON BB, 1956, 1956 VAC S T BOST, P5

[5] GROWTH OF GAYIN1-YAS-INP HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1310 - 1317