MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN

被引：73

作者：

CHENG, KY

CHO, AY

WAGNER, WR

BONNER, WA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1015 / 1021

页数：7

共 23 条

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