TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY

[1] PROPERTIES OF MOLECULAR-BEAM EPITAXIAL INXGA1-XAS(X-ALMOST-EQUAL-TO-0.53) LAYERS GROWN ON INP SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) : 565 - 573

[2] CHENG KJ, UNPUBLISHED

[3] BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4672 - 4675

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] GROWTH OF EXTREMELY UNIFORM LAYERS BY ROTATING SUBSTRATE HOLDER WITH MOLECULAR-BEAM EPITAXY FOR APPLICATIONS TO ELECTRO-OPTIC AND MICROWAVE DEVICES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 360 - 362

[7] Hultgren RR, 1973, SELECTED VALUES THER

[8] ZN-DIFFUSED BACK-ILLUMINATED P-I-N PHOTO-DIODES IN INGAAS-INP GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 730 - 731

[9] MATYAS EE, 1979, SOV PHYS SEMICOND+, V13, P1194

[10] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 44 - 47

[1] PROPERTIES OF MOLECULAR-BEAM EPITAXIAL INXGA1-XAS(X-ALMOST-EQUAL-TO-0.53) LAYERS GROWN ON INP SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) : 565 - 573

[2] CHENG KJ, UNPUBLISHED

[3] BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4672 - 4675

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] GROWTH OF EXTREMELY UNIFORM LAYERS BY ROTATING SUBSTRATE HOLDER WITH MOLECULAR-BEAM EPITAXY FOR APPLICATIONS TO ELECTRO-OPTIC AND MICROWAVE DEVICES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 360 - 362

[7] Hultgren RR, 1973, SELECTED VALUES THER

[8] ZN-DIFFUSED BACK-ILLUMINATED P-I-N PHOTO-DIODES IN INGAAS-INP GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 730 - 731

[9] MATYAS EE, 1979, SOV PHYS SEMICOND+, V13, P1194

[10] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 44 - 47