(INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD

[1] RECENT ADVANCES IN EPITAXY [J]. THIN SOLID FILMS, 1972, 12 (01) : 167 - +

[2] Blanc J., 1978, Heteroepitaxial semiconductors for electronic devices, P282

[3] FUKUI T, 1982, I PHYS C SER, V63, P113

[4] GAAS-A1AS LAYERED FILMS [J]. THIN SOLID FILMS, 1979, 57 (01) : 3 - 13

[5] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325

[6] BAND-STRUCTURE OF ALAS-GAAS(100) SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (26) : 1680 - 1683

[7] X-RAY-DIFFRACTION STUDY OF A ONE-DIMENSIONAL GAAS-ALAS SUPERLATTICE [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1977, 10 (FEB1) : 1 - 6

[8] A NEW HIGH-ELECTRON MOBILITY MONOLAYER SUPERLATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L680 - L682

[1] RECENT ADVANCES IN EPITAXY [J]. THIN SOLID FILMS, 1972, 12 (01) : 167 - +

[2] Blanc J., 1978, Heteroepitaxial semiconductors for electronic devices, P282

[3] FUKUI T, 1982, I PHYS C SER, V63, P113

[4] GAAS-A1AS LAYERED FILMS [J]. THIN SOLID FILMS, 1979, 57 (01) : 3 - 13

[5] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325

[6] BAND-STRUCTURE OF ALAS-GAAS(100) SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (26) : 1680 - 1683

[7] X-RAY-DIFFRACTION STUDY OF A ONE-DIMENSIONAL GAAS-ALAS SUPERLATTICE [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1977, 10 (FEB1) : 1 - 6

[8] A NEW HIGH-ELECTRON MOBILITY MONOLAYER SUPERLATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L680 - L682