SELF-CONSISTENT VARIATIONAL CALCULATIONS AND ALLOY SCATTERING IN SEMICONDUCTOR HETEROJUNCTIONS

被引：41

作者：

BASTARD, G

机构：

来源：

SURFACE SCIENCE | 1984年 / 142卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(84)90323-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：284 / 289

页数：6

相关论文

共 12 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .2. LOW-TEMPERATURE MOBILITY
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) : 3900 - 3907
[2] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) : 3893 - 3899
[3] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
KEEVER, M
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1023 - 1028
[4] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES
FANG, FF
HOWARD, WE
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &
[5] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
GULDNER, Y
VIEREN, JP
VOISIN, P
VOOS, M
RAZEGHI, M
POISSON, MA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 877 - 879
[6] HAYES JR, 1982, GAINASP ALLOY SEMICO
[7] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE
ISHIKAWA, T
SAITO, J
SASA, S
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L675 - L676
[8] NICHOLAS RJ, 1983, LECTURE NOTES PHYSIC
[9] DEPENDENCE OF THE MOBILITY AND THE CONCENTRATION OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/N-ALXGA1-XAS HETEROSTRUCTURE ON THE ALAS MOLE FRACTION
SAITO, J
NANBU, K
ISHIKAWA, T
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L79 - L81
[10] STERN F, COMMUNICATION