ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE

被引：80

作者：

ISHIKAWA, T

SAITO, J

SASA, S

HIYAMIZU, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 11期

关键词：

D O I：

10.1143/JJAP.21.L675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L675 / L676

页数：2

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