GENERAL TRANSPORT-THEORY OF NOISE IN P-N JUNCTION-LIKE DEVICES .3. JUNCTION NOISE IN P+-N DIODES AT HIGH INJECTION

被引：9

作者：

MIN, HS

VANVLIET, KM

VANDERZI.A

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 10卷 / 02期

关键词：

D O I：

10.1002/pssa.2210100230

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：605 / &

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[5]

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[6]

MORSE PM, 1953, METHODS THEORETICAL, V1, pCH7

SCHNEIDER, B ;

STRUTT, MJO .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (10) :1731-1739

[8]

TARNG ML, IN PRESS

[9]

van der Ziel A., 1959, Fluctuation Phenomena in Semiconductors

[10]

Van Vliet KM., 1965, FLUCTUATION PHENOMEN, P267