INFLUENCE OF DIFFUSION ON STABILITY OF SUPERCRITICAL TRANSFERRED ELECTRON AMPLIFIER

被引：22

作者：

JEPPESEN, P

JEPPSSON, B

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1972年 / 60卷 / 04期

关键词：

D O I：

10.1109/PROC.1972.8660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：452 / +

页数：1

共 14 条

[1] EFFECT OF FIELD-DEPENDENT DIFFUSION ON STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].

BUTCHER, PN ;

FAWCETT, W ;

OGG, NR .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (06) :755-&

[2] STABILISATION MECHANISM FOR SUPERCRITICAL TRANSFERRED-ELECTRON AMPLIFIERS [J].

CHARLTON ;

FREEMAN, KR ;

HOBSON, GS .

ELECTRONICS LETTERS, 1971, 7 (19) :575-&

[3]

COPELAND JA, 1971, SEMICONDUCTORS SEM A, V7, P3

[4] CALCULATION OF HOT ELECTRON DIFFUSION RATE FOR GAAS [J].

FAWCETT, W ;

REES, HD .

PHYSICS LETTERS A, 1969, A 29 (10) :578-&

[5]

FAWCETT W, PRIVATE COMMUNICATIO

[6] LSA RELAXATION OSCILLATOR PRINCIPLES [J].

JEPPESEN, P ;

JEPPSSON, BI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (07) :439-+

[7]

MAGARSHAK J, 1970, SEP P INT C MICR OPT, P16

[8] STABILITY AND REFLECTION GAIN OF SUBCRITICALLY DOPED GUNN DIODES [J].

MAHROUS, S ;

ROBSON, PN ;

HARTNAGEL, HL .

SOLID-STATE ELECTRONICS, 1968, 11 (10) :965-+

[9] MICROWAVE PROPERTIES AND APPLICATIONS OF NEGATIVE CONDUCTANCE TRANSFERRED ELECTRON DEVICES [J].

PERLMAN, BS ;

UPADHYAYULA, CL ;

SIEKANOWICZ, WW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1229-+

[10] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].

RUCH, JG ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&

← 1 2 →