STABILISATION MECHANISM FOR SUPERCRITICAL TRANSFERRED-ELECTRON AMPLIFIERS

被引:30
作者
CHARLTON
FREEMAN, KR
HOBSON, GS
机构
关键词
D O I
10.1049/el:19710389
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:575 / &
相关论文
共 9 条
[1]  
FREEMAN KR, TO BE PUBLISHED
[2]   OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].
HARRIS, JS ;
NANNICHI, Y ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&
[3]  
MAGARSHAK J, 1970, 1970 P MOGA C AMST, P27
[4]  
MAHROUS S, 1966, ELECTRON LETT, V2, P107
[5]  
MCCUMBER DE, 1966, IEEE T ELECTRON DEV, VED13, P4
[6]  
PERLMAN BS, 1970, IEEE MICR T, VMT18, P911
[7]  
POLLMANN H, 1970, 1970 P MOGA C AMST, P1624
[8]   TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].
RUCH, JG ;
FAWCETT, W .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&
[9]   NOISE REDUCTION IN BULK NEGATIVE-RESISTANCE AMPLIFIERS [J].
THIM, HW .
ELECTRONICS LETTERS, 1971, 7 (04) :106-+