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NOISE REDUCTION IN BULK NEGATIVE-RESISTANCE AMPLIFIERS
被引:30
作者
:
THIM, HW
论文数:
0
引用数:
0
h-index:
0
THIM, HW
机构
:
来源
:
ELECTRONICS LETTERS
|
1971年
/ 7卷
/ 04期
关键词
:
D O I
:
10.1049/el:19710071
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:106 / +
页数:1
相关论文
共 10 条
[1]
EMITTER CONTROLLED NEGATIVE RESISTANCE IN GAAS
[J].
ATALLA, MM
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett-Packard, Palo Alto, CA
ATALLA, MM
;
MOLL, JL
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett-Packard, Palo Alto, CA
MOLL, JL
.
SOLID-STATE ELECTRONICS,
1969,
12
(08)
:619
-&
[2]
INSTABILITIES OF INP 3-LEVEL TRANSFERRED-ELECTRON OSCILLATORS
[J].
HILSUM, C
论文数:
0
引用数:
0
h-index:
0
HILSUM, C
;
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
MULLIN, JB
;
PREW, BA
论文数:
0
引用数:
0
h-index:
0
PREW, BA
;
REES, HD
论文数:
0
引用数:
0
h-index:
0
REES, HD
;
STRAUGHAN, BW
论文数:
0
引用数:
0
h-index:
0
STRAUGHAN, BW
.
ELECTRONICS LETTERS,
1970,
6
(10)
:307
-+
[3]
DETAILED THEORY OF NEGATIVE CONDUCTANCE OF BULK NEGATIVE MOBILITY AMPLIFIERS IN LIMIT OF ZERO ION DENSITY
[J].
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(09)
:476
-+
[4]
GUNN EFFECT UNDER IMPERFECT CATHODE BOUNDARY CONDITIONS
[J].
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, University of Colorado, Boulder
KROEMER, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1968,
ED15
(11)
:819
-+
[5]
MAGARSHACK J, 1970, MOGA, P27
[6]
THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
[J].
MCCUMBER, DE
论文数:
0
引用数:
0
h-index:
0
MCCUMBER, DE
;
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:4
-+
[7]
TRANSPORT PROPERTIES OF GAAS
[J].
RUCH, JG
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford University, Stanford
RUCH, JG
;
KINO, GS
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford University, Stanford
KINO, GS
.
PHYSICAL REVIEW,
1968,
174
(03)
:921
-+
[8]
Shockley W., 1966, QUANTUM THEORY ATOMS
[9]
MICROWAVE AMPLIFICATION IN A GAAS BULK SEMICONDUCTOR
[J].
THIM, HW
论文数:
0
引用数:
0
h-index:
0
THIM, HW
;
BARBER, MR
论文数:
0
引用数:
0
h-index:
0
BARBER, MR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:110
-+
[10]
TEMPERATURE EFFECTS IN BULK GAAS AMPLIFIERS
[J].
THIM, HW
论文数:
0
引用数:
0
h-index:
0
THIM, HW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(02)
:59
-+
←
1
→
共 10 条
[1]
EMITTER CONTROLLED NEGATIVE RESISTANCE IN GAAS
[J].
ATALLA, MM
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett-Packard, Palo Alto, CA
ATALLA, MM
;
MOLL, JL
论文数:
0
引用数:
0
h-index:
0
机构:
Hewlett-Packard, Palo Alto, CA
MOLL, JL
.
SOLID-STATE ELECTRONICS,
1969,
12
(08)
:619
-&
[2]
INSTABILITIES OF INP 3-LEVEL TRANSFERRED-ELECTRON OSCILLATORS
[J].
HILSUM, C
论文数:
0
引用数:
0
h-index:
0
HILSUM, C
;
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
MULLIN, JB
;
PREW, BA
论文数:
0
引用数:
0
h-index:
0
PREW, BA
;
REES, HD
论文数:
0
引用数:
0
h-index:
0
REES, HD
;
STRAUGHAN, BW
论文数:
0
引用数:
0
h-index:
0
STRAUGHAN, BW
.
ELECTRONICS LETTERS,
1970,
6
(10)
:307
-+
[3]
DETAILED THEORY OF NEGATIVE CONDUCTANCE OF BULK NEGATIVE MOBILITY AMPLIFIERS IN LIMIT OF ZERO ION DENSITY
[J].
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(09)
:476
-+
[4]
GUNN EFFECT UNDER IMPERFECT CATHODE BOUNDARY CONDITIONS
[J].
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, University of Colorado, Boulder
KROEMER, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1968,
ED15
(11)
:819
-+
[5]
MAGARSHACK J, 1970, MOGA, P27
[6]
THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
[J].
MCCUMBER, DE
论文数:
0
引用数:
0
h-index:
0
MCCUMBER, DE
;
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:4
-+
[7]
TRANSPORT PROPERTIES OF GAAS
[J].
RUCH, JG
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford University, Stanford
RUCH, JG
;
KINO, GS
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford University, Stanford
KINO, GS
.
PHYSICAL REVIEW,
1968,
174
(03)
:921
-+
[8]
Shockley W., 1966, QUANTUM THEORY ATOMS
[9]
MICROWAVE AMPLIFICATION IN A GAAS BULK SEMICONDUCTOR
[J].
THIM, HW
论文数:
0
引用数:
0
h-index:
0
THIM, HW
;
BARBER, MR
论文数:
0
引用数:
0
h-index:
0
BARBER, MR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:110
-+
[10]
TEMPERATURE EFFECTS IN BULK GAAS AMPLIFIERS
[J].
THIM, HW
论文数:
0
引用数:
0
h-index:
0
THIM, HW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(02)
:59
-+
←
1
→