TEMPERATURE EFFECTS IN BULK GAAS AMPLIFIERS

被引：13

作者：

THIM, HW

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 02期

关键词：

D O I：

10.1109/T-ED.1967.15899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：59 / +

页数：1

共 12 条

[1] MICROWAVE OSCILLATIONS IN HIGH-RESISTIVITY GAAS [J].

DAY, GF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :88-+

[2] LINEAR OR SMALL-SIGNAL THEORY FOR GUNN EFFECT [J].

ENGELMANN, RW ;

QUATE, CF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :44-+

[3] BULK GAAS MICROWAVE AMPLIFERS [J].

FOYT, AG ;

QUIST, TM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :199-&

[4] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&

[5] PHENOMENOLOGICAL ASPECTS OF CW MICROWAVE OSCILLATIONS IN GaAs [J].

Hakki, B. W. ;

Knight, S. .

SOLID STATE COMMUNICATIONS, 1965, 3 (05) :89-91

[6] MICROWAVE PHENOMENA IN BULK GAAS [J].

HAKKI, BW ;

KNIGHT, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :94-+

[7] EXTERNAL NEGATIVE CONDUCTANCE OF A SEMICONDUCTOR WITH NEGATIVE DIFFERENTIAL MOBILITY [J].

KROEMER, H .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09) :1246-&

[8] THEORY OF GUNN EFFECT [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1736-&

[9] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

MCCUMBER, DE ;

CHYNOWETH, AG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+

[10] INHIBITION OF NEGATIVE RESISTANCE DIPOLE WAVES AND DOMAINS IN N-GAAS [J].

RIDLEY, BK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :41-+

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