DIELECTRIC-PROPERTIES OF PLASMA-POLYMERIZED HEXAMETHYLDISILOXANE FILMS .1. COMPLEX PERMITTIVITY

[1] BRODSKY MH, 1979, AMORPHOUS SEMICONDUC

[2] NEW METHOD OF GAAS PASSIVATION WITH THIN POLYMER-FILMS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 87 - 89

[3] EINSPRUCH NG, 1984, PLASMA PROCESSING VL, V8

[4] Gazicki M., 1983, Plasma Chemistry and Plasma Processing, V3, P279, DOI 10.1007/BF00564629

[5] THE FORMATION OF THIN POLYMER FILMS IN THE GAS DISCHARGE [J]. JOURNAL OF POLYMER SCIENCE, 1960, 44 (144): : 551 - 552

[6] HASTED JB, 1961, PROGRESS DIELECTRICS, V3, P101

[7] HOLLAHAN JR, 1978, THIN FILM PROCESSES, pCH4

[8] INAGAKI N, 1984, ADV LOW TEMPERATURE, V1, P80

[9] INDUSTRIAL MICROWAVE PLASMA POLYMERIZATION [J]. THIN SOLID FILMS, 1984, 118 (02) : 203 - 210

[10] ELECTRICAL-PROPERTIES OF METAL-POLYMER (POLYSILOXANE)-SILICON STRUCTURES AND APPLICATION OF POLYSILOXANE TO PASSIVATION OF SEMICONDUCTOR-DEVICES [J]. THIN SOLID FILMS, 1976, 33 (01) : 35 - 41

[1] BRODSKY MH, 1979, AMORPHOUS SEMICONDUC

[2] NEW METHOD OF GAAS PASSIVATION WITH THIN POLYMER-FILMS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 87 - 89

[3] EINSPRUCH NG, 1984, PLASMA PROCESSING VL, V8

[4] Gazicki M., 1983, Plasma Chemistry and Plasma Processing, V3, P279, DOI 10.1007/BF00564629

[5] THE FORMATION OF THIN POLYMER FILMS IN THE GAS DISCHARGE [J]. JOURNAL OF POLYMER SCIENCE, 1960, 44 (144): : 551 - 552

[6] HASTED JB, 1961, PROGRESS DIELECTRICS, V3, P101

[7] HOLLAHAN JR, 1978, THIN FILM PROCESSES, pCH4

[8] INAGAKI N, 1984, ADV LOW TEMPERATURE, V1, P80

[9] INDUSTRIAL MICROWAVE PLASMA POLYMERIZATION [J]. THIN SOLID FILMS, 1984, 118 (02) : 203 - 210

[10] ELECTRICAL-PROPERTIES OF METAL-POLYMER (POLYSILOXANE)-SILICON STRUCTURES AND APPLICATION OF POLYSILOXANE TO PASSIVATION OF SEMICONDUCTOR-DEVICES [J]. THIN SOLID FILMS, 1976, 33 (01) : 35 - 41