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NEW METHOD OF GAAS PASSIVATION WITH THIN POLYMER-FILMS
被引:17
作者
:
BROSSET, D
论文数:
0
引用数:
0
h-index:
0
BROSSET, D
AI, B
论文数:
0
引用数:
0
h-index:
0
AI, B
SEGUI, Y
论文数:
0
引用数:
0
h-index:
0
SEGUI, Y
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1978年
/ 33卷
/ 01期
关键词
:
D O I
:
10.1063/1.90156
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:87 / 89
页数:3
相关论文
共 7 条
[1]
PLASMA OXIDATION OF GAAS
CHANG, RPH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHANG, RPH
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(01)
: 56
-
58
[2]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE-GALLIUM ARSENIDE INTERFACE
FOSTER, JE
论文数:
0
引用数:
0
h-index:
0
FOSTER, JE
SWARTZ, JM
论文数:
0
引用数:
0
h-index:
0
SWARTZ, JM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(11)
: 1410
-
+
[3]
HASAGAWA H, 1907, APPL PHYS LETT, V29, P567
[4]
KERN W, 1970, RCA REV, V31, P207
[5]
ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
LOGAN, RA
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SCHWARTZ, B
SUNDBURG, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SUNDBURG, WJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
: 1385
-
1390
[6]
ELECTRICAL-PROPERTIES OF METAL-POLYMER (POLYSILOXANE)-SILICON STRUCTURES AND APPLICATION OF POLYSILOXANE TO PASSIVATION OF SEMICONDUCTOR-DEVICES
MAISONNEUVE, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
MAISONNEUVE, M
SEGUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
SEGUI, Y
BUI, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
BUI, A
[J].
THIN SOLID FILMS,
1976,
33
(01)
: 35
-
41
[7]
GAS-DISCHARGE IN HEXAMETHYLDISILOXANE
SEGUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOULOUSE 3,GENIE ELECTRIQUE LAB,CNRS,EQUIPE MAT DIELECTRIQUES,F-31000 TOULOUSE,FRANCE
UNIV TOULOUSE 3,GENIE ELECTRIQUE LAB,CNRS,EQUIPE MAT DIELECTRIQUES,F-31000 TOULOUSE,FRANCE
SEGUI, Y
AI, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOULOUSE 3,GENIE ELECTRIQUE LAB,CNRS,EQUIPE MAT DIELECTRIQUES,F-31000 TOULOUSE,FRANCE
UNIV TOULOUSE 3,GENIE ELECTRIQUE LAB,CNRS,EQUIPE MAT DIELECTRIQUES,F-31000 TOULOUSE,FRANCE
AI, B
[J].
JOURNAL OF APPLIED POLYMER SCIENCE,
1976,
20
(06)
: 1611
-
1618
←
1
→
共 7 条
[1]
PLASMA OXIDATION OF GAAS
CHANG, RPH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHANG, RPH
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(01)
: 56
-
58
[2]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE-GALLIUM ARSENIDE INTERFACE
FOSTER, JE
论文数:
0
引用数:
0
h-index:
0
FOSTER, JE
SWARTZ, JM
论文数:
0
引用数:
0
h-index:
0
SWARTZ, JM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(11)
: 1410
-
+
[3]
HASAGAWA H, 1907, APPL PHYS LETT, V29, P567
[4]
KERN W, 1970, RCA REV, V31, P207
[5]
ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
LOGAN, RA
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SCHWARTZ, B
SUNDBURG, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SUNDBURG, WJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
: 1385
-
1390
[6]
ELECTRICAL-PROPERTIES OF METAL-POLYMER (POLYSILOXANE)-SILICON STRUCTURES AND APPLICATION OF POLYSILOXANE TO PASSIVATION OF SEMICONDUCTOR-DEVICES
MAISONNEUVE, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
MAISONNEUVE, M
SEGUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
SEGUI, Y
BUI, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE
BUI, A
[J].
THIN SOLID FILMS,
1976,
33
(01)
: 35
-
41
[7]
GAS-DISCHARGE IN HEXAMETHYLDISILOXANE
SEGUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOULOUSE 3,GENIE ELECTRIQUE LAB,CNRS,EQUIPE MAT DIELECTRIQUES,F-31000 TOULOUSE,FRANCE
UNIV TOULOUSE 3,GENIE ELECTRIQUE LAB,CNRS,EQUIPE MAT DIELECTRIQUES,F-31000 TOULOUSE,FRANCE
SEGUI, Y
AI, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOULOUSE 3,GENIE ELECTRIQUE LAB,CNRS,EQUIPE MAT DIELECTRIQUES,F-31000 TOULOUSE,FRANCE
UNIV TOULOUSE 3,GENIE ELECTRIQUE LAB,CNRS,EQUIPE MAT DIELECTRIQUES,F-31000 TOULOUSE,FRANCE
AI, B
[J].
JOURNAL OF APPLIED POLYMER SCIENCE,
1976,
20
(06)
: 1611
-
1618
←
1
→