CARRIER RECOMBINATION IN INDIUM ARSENIDE

被引:14
作者
HOLLIS, JEL
机构
来源
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1967年 / 91卷 / 571P期
关键词
D O I
10.1088/0370-1328/91/1/323
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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页码:151 / &
相关论文
共 13 条
[1]  
BARYSHEV NS, 1965, FIZ TVERD TELA+, V6, P2410
[2]  
BEATTIE AR, 1959, P ROY SOC A, V249, P19
[3]  
BEATTIE AR, 1959, J PHYS CHEM SOLIDS, V8, P73
[4]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[5]   TECHNIQUE FOR MEASUREMENT OF SHORT CARRIER LIFETIMES [J].
CHOO, SC ;
HEASELL, EL .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (12) :1331-&
[6]   EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF INDIUM ARSENIDE [J].
DIXON, JR ;
ENRIGHT, DP .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (05) :753-759
[7]   OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J].
DIXON, JR ;
ELLIS, JM .
PHYSICAL REVIEW, 1961, 123 (05) :1560-&
[8]   PHOTOELECTROMAGNETIC EFFECT IN INDIUM ARSENIDE [J].
DIXON, JR .
PHYSICAL REVIEW, 1957, 107 (02) :374-378
[9]  
IGLITSIN MI, 1966, FIZ TVERD TELA+, V7, P2770
[10]   TEMPERATURE DEPENDENCE OF OPTICAL ABSORPTION IN P-TYPE INDIUM ARSENIDE [J].
MATOSSI, F ;
STERN, F .
PHYSICAL REVIEW, 1958, 111 (02) :472-475