SURFACE PROCESSES IN LASER-ATOMIC LAYER EPITAXY (LASER-ALE) OF GAAS

We have studied surface processes of the laser-atomic layer epitaxy (laser-ALE) of GaAs with results from the wavelength dependence of the incident laser beam using triethylgallium (TEG) and arsine (AsH3) as source gases. Experimental results indicate that the layer-by-layer controlled ALE growth of GaAs on the GaAs substrate can be proceeded under visible wavelength laser irradiation. The possible mechanisms of the laser-ALE is the 'site-selective-decomposition' process in which the decomposition of the alkylgallium on the As-terminated surface is enhanced compared with that on the Ga-terminated surface.