LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS

被引：59

作者：

AOYAGI, Y ^{[1
]}

MASUDA, S ^{[1
]}

NAMBA, S ^{[1
]}

DOI, A ^{[1
]}

机构：

[1] INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.96208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：95 / 96

页数：2

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[1] REACTION OF C2H4 WITH PHOTO-FORMED O- HOLE-CENTERS ON SUPPORTED MOO3
ANPO, M
KUBOKAWA, Y
[J]. JOURNAL OF CATALYSIS, 1982, 75 (01) : 204 - 206
[2] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
LEYS, MR
VEENVLIET, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153
[3] ON THE REACTION-MECHANISM OF GAAS MOCVD
NISHIZAWA, J
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 413 - 417