ON THE REACTION-MECHANISM OF GAAS MOCVD

[1] KUMAGAWA M, 1970, J ELECTROCHEM SOC, V117, P907

[2] KUMAGAWA M, 1968, JPN J APPL PHYS, V7, P1322

[3] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153

[4] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +

[5] MECHANISM OF CHEMICAL VAPOR-DEPOSITION OF SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 213 - 218

[6] MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 82 - 89

[7] NISHIZAWA J, 1980, MAY EL SOC M ST LOUI

[8] VARIOUS CHEMICAL MECHANISMS FOR THE CRYSTAL-GROWTH OF III-V SEMICONDUCTORS USING COORDINATION-COMPOUNDS AS STARTING MATERIAL IN THE MOCVD PROCESS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 135 - 144

[1] KUMAGAWA M, 1970, J ELECTROCHEM SOC, V117, P907

[2] KUMAGAWA M, 1968, JPN J APPL PHYS, V7, P1322

[3] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153

[4] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +

[5] MECHANISM OF CHEMICAL VAPOR-DEPOSITION OF SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 213 - 218

[6] MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 82 - 89

[7] NISHIZAWA J, 1980, MAY EL SOC M ST LOUI

[8] VARIOUS CHEMICAL MECHANISMS FOR THE CRYSTAL-GROWTH OF III-V SEMICONDUCTORS USING COORDINATION-COMPOUNDS AS STARTING MATERIAL IN THE MOCVD PROCESS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 135 - 144