MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON

[1] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4 [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 284 - 289

[2] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1382 - 1388

[3] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1389 - 1391

[4] KUMAGAWA M, 1968, JPN J APPL PHYS, V7, P1322

[5] ABNORMAL IMPURITY DISTRIBUTIONS IN HIGH-PURITY EPITAXIAL SILICON LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 781 - 786

[6] Nishimura J., 1970, Proceedings of the 11th international conference on cosmic raysOrigin and galactic phenomena, P239

[7] ANISOTROPY IN GROWTH-RATES OF SILICON DEPOSITED BY REDUCTION OF SILICON TETRACHLORIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 290 - 298

[8] NISHIZAWA J, 1978, 4TH INT C VAP GROWTH

[9] Nishizawa J.-I., 1972, Journal of Crystal Growth, V13-14, P297, DOI 10.1016/0022-0248(72)90173-X

[10] SILICON EPITAXIAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 241 - +

[1] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4 [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 284 - 289

[2] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1382 - 1388

[3] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1389 - 1391

[4] KUMAGAWA M, 1968, JPN J APPL PHYS, V7, P1322

[5] ABNORMAL IMPURITY DISTRIBUTIONS IN HIGH-PURITY EPITAXIAL SILICON LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 781 - 786

[6] Nishimura J., 1970, Proceedings of the 11th international conference on cosmic raysOrigin and galactic phenomena, P239

[7] ANISOTROPY IN GROWTH-RATES OF SILICON DEPOSITED BY REDUCTION OF SILICON TETRACHLORIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 290 - 298

[8] NISHIZAWA J, 1978, 4TH INT C VAP GROWTH

[9] Nishizawa J.-I., 1972, Journal of Crystal Growth, V13-14, P297, DOI 10.1016/0022-0248(72)90173-X

[10] SILICON EPITAXIAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 241 - +