SILICON EPITAXIAL-GROWTH

被引：43

作者：

NISHIZAWA, JI

TERASAKI, T

SHIMBO, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1972年 / 17卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(72)90253-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：241 / +

页数：1

共 11 条

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[6]

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[7]

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[9] SCREW-TYPE NUCLEUS CENTERS IN SILICON EPITAXIAL GROWTH [J].

SHIMBO, M ;

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NISHIZAWA, JI .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :487-+

[10] SURFACE ORIENTATION EFFECT OF SHADOW OF STACKING FAULT [J].

SUNAMI, H ;

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NISHIZAW.JI .

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