SCREW-TYPE NUCLEUS CENTERS IN SILICON EPITAXIAL GROWTH

被引：11

作者：

SHIMBO, M

TERASAKI, T

NISHIZAWA, JI

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.1659635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：487 / +

页数：1

共 8 条

[1] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].

BOOKER, GR ;

STICKLER, R .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3281-&

[2] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J].

CHARIG, JM ;

JOYCE, BA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) :957-962

[3] DISLOCATIONS IN THE DIAMOND LATTICE [J].

HORNSTRA, J .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :129-141

[4] OBSERVATION OF PARTIAL DISLOCATIONS OF A SCREW TYPE IN EPITAXIAL SILICON LAYERS [J].

KUMAGAWA, M ;

SUNAMI, H ;

NISHIZAWA, JI .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (10) :1296-+

[5] EPITAXIAL GROWTH WITH LIGHT IRRADIATION [J].

KUMAGAWA, M ;

SUNAMI, H ;

TERASAKI, T ;

NISHIZAWA, JI .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) :1332-+

[6]

NIELSEN S, 1964, MICROELECTRON RELIAB, V3, P233

[7] SURFACE ORIENTATION EFFECT OF SHADOW OF STACKING FAULT [J].

SUNAMI, H ;

TERASAKI, T ;

MIYAMOTO, N ;

NISHIZAW.JI .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4670-&

[8]

SUNAMI H, 1969, P C IEE TECH GROUP T

← 1 →