OBSERVATION OF PARTIAL DISLOCATIONS OF A SCREW TYPE IN EPITAXIAL SILICON LAYERS

被引：6

作者：

KUMAGAWA, M

SUNAMI, H

NISHIZAWA, JI

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 10期

关键词：

D O I：

10.1143/JJAP.7.1296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1296 / +

页数：1

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