EPITAXIAL GROWTH WITH LIGHT IRRADIATION

[1] KINETICS OF SILICON-SILICONTETRACHLORIDE REACTION IN A FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 319 - &

[2] LOW-TEMPERATURE SILICON EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 401 - +

[3] HAREN RR, 1932, J AM CHEM SOC, V54, P3917

[4] SELECTIVE EPITAXIAL DEPOSITION OF SILICON [J]. NATURE, 1962, 195 (4840) : 485 - &

[5] KUMAGAWA M, 1966, B RESEARCH I ELECTRO, V1, P149

[6] LONG OA, 1957, P ROY SOC LOND A MAT, V240, P499

[7] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255

[8] INFRARED SPECTRA AND MOLECULAR STRUCTURES OF SIH3F, SIH3CL, AND SIH3BR [J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (05) : 855 - 859

[9] NISHIZAWA J, 1961, J METALL SOC JPN, V25, P177

[10] NISHIZAWA J, 1961, J METALL SOC JPN, V25, P149

[1] KINETICS OF SILICON-SILICONTETRACHLORIDE REACTION IN A FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 319 - &

[2] LOW-TEMPERATURE SILICON EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 401 - +

[3] HAREN RR, 1932, J AM CHEM SOC, V54, P3917

[4] SELECTIVE EPITAXIAL DEPOSITION OF SILICON [J]. NATURE, 1962, 195 (4840) : 485 - &

[5] KUMAGAWA M, 1966, B RESEARCH I ELECTRO, V1, P149

[6] LONG OA, 1957, P ROY SOC LOND A MAT, V240, P499

[7] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255

[8] INFRARED SPECTRA AND MOLECULAR STRUCTURES OF SIH3F, SIH3CL, AND SIH3BR [J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (05) : 855 - 859

[9] NISHIZAWA J, 1961, J METALL SOC JPN, V25, P177

[10] NISHIZAWA J, 1961, J METALL SOC JPN, V25, P149