LOW-TEMPERATURE SILICON EPITAXY

Highly oriented large-area silicon films have been deposited onto single crystal Si, <111> substrates. Illumination of the substrates with a mercury vapor lamp during deposition appeared to be essential for obtaining oriented films. The deposition was accomplished by an H2 reduction of Si2Cl6. The energy of activation for this reaction was found to be 35.7 kcal/mole ±5%. Utmost chemical cleanliness of the substrate surface is essential and more critical than for high temperature deposition. © 1968, The Electrochemical Society, Inc. All rights reserved.