STUDY OF EARLY STAGES OF EPITAXY OF SILICON ON SILICON

被引：40

作者：

JONA, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 06期

关键词：

D O I：

10.1063/1.1754727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：235 / &

共 11 条

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[2]

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[5]

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[9] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].

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[10] GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .I. EXPERIMENTAL PROCEDURE + INITIAL ASSESSMENT [J].

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