EPITAXIAL GROWTH OF SILICON BY VACUUM SUBLIMATION

[1] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1563 - 1571

[2] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[4] HALE AF, 1960, 1960 EL DEV M WASH

[5] KUROV GA, 1957, KRISTALLOGRAFIYA, V2, P59

[6] KUROV GA, 1961, FIZ TVERD TELA, V3, P1662

[7] PTUSHINSKII IG, 1959, UKR FIZ ZH, V4, P125

[8] STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) : 1536 - &

[9] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061

[10] GERMANIUM FILMS ON GERMANIUM OBTAINED BY THERMAL EVAPORATION IN VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1170 - &

[1] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1563 - 1571

[2] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[4] HALE AF, 1960, 1960 EL DEV M WASH

[5] KUROV GA, 1957, KRISTALLOGRAFIYA, V2, P59

[6] KUROV GA, 1961, FIZ TVERD TELA, V3, P1662

[7] PTUSHINSKII IG, 1959, UKR FIZ ZH, V4, P125

[8] STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) : 1536 - &

[9] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061

[10] GERMANIUM FILMS ON GERMANIUM OBTAINED BY THERMAL EVAPORATION IN VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1170 - &