ANISOTROPY OF MACROSTEP MOTION AND PATTERN EDGE-DISPLACEMENTS DURING GROWTH OF EPITAXIAL SILICON ON SILICON NEAR [100]

被引：9

作者：

DRUM, CM

CLARK, CA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 11期

关键词：

D O I：

10.1149/1.2407331

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1401 / +

页数：1

共 15 条

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