ANISOTROPY IN GROWTH-RATES OF SILICON DEPOSITED BY REDUCTION OF SILICON TETRACHLORIDE

被引：25

作者：

NISHIZAWA, J ^{[1
]}

KATO, Y ^{[1
]}

SHIMBO, M ^{[1
]}

机构：

[1] TOHOKU UNIV,RES INST ELECT COMMUN,SENDAI,JAPAN

来源：

关键词：

D O I：

10.1016/0022-0248(75)90143-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：290 / 298

页数：9

共 5 条

[1] NISHIZAWA J, 1974, J CRYST GROWTH, V24, P215, DOI 10.1016/0022-0248(74)90306-6
[2] Nishizawa J.-I., 1972, Journal of Crystal Growth, V13-14, P297, DOI 10.1016/0022-0248(72)90173-X
[3] SILICON EPITAXIAL-GROWTH
NISHIZAWA, JI
TERASAKI, T
SHIMBO, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 241 - +
[4] DEFECT-FREE NUCLEATION OF SILICON ON [111] SILICON SURFACES
SHIMBO, M
NISHIZAWA, J
TERASAKI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 23 (04) : 267 - 274
[5] SURFACE ORIENTATION EFFECT OF SHADOW OF STACKING FAULT
SUNAMI, H
TERASAKI, T
MIYAMOTO, N
NISHIZAW.JI
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4670 - &