DEFECT-FREE NUCLEATION OF SILICON ON [111] SILICON SURFACES

[1] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[2] OBSERVATION OF NUCLEUS CENTERS ON SOLUTION-GROWN GERMANIUM EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 486 - +

[3] Nishizawa J.-I., 1972, Journal of Crystal Growth, V13-14, P297, DOI 10.1016/0022-0248(72)90173-X

[4] SILICON EPITAXIAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 241 - +

[5] SCREW-TYPE NUCLEUS CENTERS IN SILICON EPITAXIAL GROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 487 - +

[6] SURFACE ORIENTATION EFFECT OF SHADOW OF STACKING FAULT [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4670 - &

[1] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[2] OBSERVATION OF NUCLEUS CENTERS ON SOLUTION-GROWN GERMANIUM EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 486 - +

[3] Nishizawa J.-I., 1972, Journal of Crystal Growth, V13-14, P297, DOI 10.1016/0022-0248(72)90173-X

[4] SILICON EPITAXIAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 241 - +

[5] SCREW-TYPE NUCLEUS CENTERS IN SILICON EPITAXIAL GROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 487 - +

[6] SURFACE ORIENTATION EFFECT OF SHADOW OF STACKING FAULT [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4670 - &