MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON

[11] PERFECT CRYSTAL-GROWTH OF SILICON BY VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 664 - 669

[12] INELASTIC LIGHT-SCATTERING STUDIES OF SILICON CHEMICAL VAPOR-DEPOSITION (CVD) SYSTEMS [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 264 - 273

[13] DEFECT-FREE NUCLEATION OF SILICON ON [111] SILICON SURFACES [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 23 (04) : 267 - 274

[14] SIRTL E, 1974, J ELECTROCHEM SOC, V121, P919, DOI 10.1149/1.2401953

[15] 1965, JANAF THERMOCHEMICAL, V1

[11] PERFECT CRYSTAL-GROWTH OF SILICON BY VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 664 - 669

[12] INELASTIC LIGHT-SCATTERING STUDIES OF SILICON CHEMICAL VAPOR-DEPOSITION (CVD) SYSTEMS [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 264 - 273

[13] DEFECT-FREE NUCLEATION OF SILICON ON [111] SILICON SURFACES [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 23 (04) : 267 - 274

[14] SIRTL E, 1974, J ELECTROCHEM SOC, V121, P919, DOI 10.1149/1.2401953

[15] 1965, JANAF THERMOCHEMICAL, V1