PERFECT CRYSTAL-GROWTH OF SILICON BY VAPOR-DEPOSITION

[1] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3754 - &

[2] CONDITIONS FOR GENERATION OF SLIP BY DIFFUSION OF PHOSPHORUS INTO SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3441 - &

[3] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 459 - 474

[4] KOHRA K, 1967, J PHYS SOC JAPAN, V17, P589

[5] PLASTIC DEFORMATION IN EPITAXIAL GE LAYERS GROWN ON SINGLE CRYSTAL SEMI-INSULATING GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 969 - &

[6] MIYAMOTO N, 1974, J JPN SOC APPL PHY S, V43, P408

[7] MIYAMOTO N, 1973, 5TH P INT C SOL STAT

[8] MROZKOWSKI RS, 1968, J ELECTROCHEM SOC, V115, P750

[9] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[10] Renninger M, 1967, ADV XRAY ANAL, V10, P32

[1] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3754 - &

[2] CONDITIONS FOR GENERATION OF SLIP BY DIFFUSION OF PHOSPHORUS INTO SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3441 - &

[3] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 459 - 474

[4] KOHRA K, 1967, J PHYS SOC JAPAN, V17, P589

[5] PLASTIC DEFORMATION IN EPITAXIAL GE LAYERS GROWN ON SINGLE CRYSTAL SEMI-INSULATING GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 969 - &

[6] MIYAMOTO N, 1974, J JPN SOC APPL PHY S, V43, P408

[7] MIYAMOTO N, 1973, 5TH P INT C SOL STAT

[8] MROZKOWSKI RS, 1968, J ELECTROCHEM SOC, V115, P750

[9] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[10] Renninger M, 1967, ADV XRAY ANAL, V10, P32