MECHANISM OF CHEMICAL VAPOR-DEPOSITION OF SILICON

被引：45

作者：

NISHIZAWA, J

SAITO, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 52卷 / APR期

关键词：

D O I：

10.1016/0022-0248(81)90196-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：213 / 218

页数：6

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共 10 条

[1] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL
BAN, VS
GILBERT, SL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1382 - 1388
[2] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1389 - 1391
[3] BAN VS, 1978, J JAPAN ASS CRYSTAL, V5, P119
[4] LASER-INDUCED VAPOR-DEPOSITION OF SILICON
HANABUSA, M
NAMIKI, A
YOSHIHARA, K
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 626 - 627
[5] MATRIX-ISOLATION STUDY OF VACUUM-ULTRAVIOLET PHOTOLYSIS OF TRICHLOROSILANE . INFRARED SPECTRUM OF FREE RADICAL SICL3
JACOX, ME
MILLIGAN, DE
[J]. JOURNAL OF CHEMICAL PHYSICS, 1968, 49 (07) : 3130 - &
[6] KUMAGAWA M, 1968, JPN J APPL PHYS, V7, P1322
[7] MATRIX-ISOLATION STUDY OF VACUUM-ULTRAVIOLET PHOTOLYSIS OF DICHLOROSILANE . INFRARED SPECTRUM OF FREE RADICAL SICL2
MILLIGAN, DE
JACOX, ME
[J]. JOURNAL OF CHEMICAL PHYSICS, 1968, 49 (04) : 1938 - &
[8] MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON
NISHIZAWA, J
NIHIRA, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 82 - 89
[9] NISHIZAWA J, 1978, CRYST GROWTH, V2, P57
[10] SEDGWICK TO, 1978, J JAPAN ASS CRYSTAL, V5, P93